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UT90N03L-TN3-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 UT90N03L-TN3-R
功能描述  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT90N03L-TN3-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=24V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±12V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
0.5
0.9
1.5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=9A
---
26
35
mΩ
VGS=4.5V,ID=7A
---
35
45
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
635
---
pF
Coss
Output Capacitance
---
135
---
Crss
Reverse Transfer Capacitance
---
40
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=15V, ID=.8A,
VGS=4.5V,RGEN=3.3Ω
---
7
---
ns
tr
Rise Time
---
13
---
ns
td(off)
Turn-Off Delay Time
---
32
---
ns
tf
Fall Time
---
3.5
---
ns
Qg
Total Gate Charge
VGS=4.5V, VDS=15V,
ID=5.8A
---
10.5
---
nC
Qgs
Gate-Source
Charge
---
1.6
---
nC
Qgd
Gate-Drain “Miller” Charge
---
2.7
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=1A
---
0.8
1
V
Ls
Continuous Source Current
1
---
---
19
A
Notes:
①
Pulse test ; Pulse width
300s, duty cycle2%.
②
Pulse width limited by maximum allowable junction temperature.
③ Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25
Ω, IAS = 7A, VGS =10V. Part not recommended for use above this value
UT90N03L-TN3-R



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