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UT4435G-S08-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 UT4435G-S08-R
功能描述  P-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT4435G-S08-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=-250μA
-30
---
---
V
IDSS
Zero Gate Voltage Drain Current
VDS=-30V , VGS=0V , TJ=25℃
---
---
-1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=-250μA
-1.0
-1.6
-2.5
V
RDS(ON)
Drain-Source On Resistance
2
VGS=-10V,ID=-8A
---
16.5
20
mΩ
VGS=-4.5V,ID=-5A
---
25.6
32
GFS
Forward Transconductance
VDS=-10V, ID=-3A
---
6.8
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=-15V, VGS=0V, f=1MHz
---
1250
1820
pF
Coss
Output Capacitance
---
160
235
Crss
Reverse Transfer Capacitance
---
90
130
Switching Characteristics
td(on)
Turn-On Delay Time
2,3
VDD=-15V , VGS=-10V ,
RG=6,ID=-1A
---
5.8
11
ns
tr
Rise Time
2,3
---
18.8
36
ns
td(off)
Turn-Off Delay Time
2,3
---
46.9
89
ns
tf
Fall Time
2,3
---
12.3
23
ns
Qg
Total Gate Charge
2,3
VDS=-15V , VGS=-4.5V ,
ID=-5A
---
11
17
nC
Qgs
Gate-Source
Charge
2,3
---
3.4
6
nC
Qgd
Gate-Drain “Miller” Charge
2,3
---
4.2
8
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=-1A
---
---
-1
V
UT4435G-S08-R



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