Normalized RDSON vs. T

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—

Tota l Gate Charge

2,3

---

2.8

5.6

nC

Ga te-Source Cha rge

2,3

---

0.5

1

nC

Ga te-Drain “Miller” Charge

2,3

---

1.5

3

nC

Drain-Source Diode Characteristics

Source-Drain Diode Forward Voltage

3

---

---

1

V

Conti nuous Source Current

VG=VD=0V , Force

Current

---

---

6.7

A

Pul s ed Source Current

---

---

13.4

A

Notes:

1. Repetitive Rating : Pulsed width limited by maximum junction temperature.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3. Essentially independent of operating temperature.

Fig.2

J

UT4450G-S08-R