数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

UT4812G-S08-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 UT4812G-S08-R
功能描述  Dual N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT4812G-S08-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  UT4812G-S08-R Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UT4812G-S08-R Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UT4812G-S08-R Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UT4812G-S08-R Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UT4812G-S08-R Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
www.doingter.cn
—
2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=30V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.1
1.7
2.1
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=7A
---
17
25
mΩ
VGS=4.5V,ID=6A
---
26
40
GFS
Forward Transconductance
VDS=5V, ID=7A
---
15
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
380
---
pF
Coss
Output Capacitance
---
67
---
Crss
Reverse Transfer Capacitance
---
41
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDD=15V, RL =2Ω
RGEN=3Ω. VGS=10V,
---
5
---
ns
tr
Rise Time
---
3
---
ns
td(off)
Turn-Off Delay Time
---
15
---
ns
tf
Fall Time
---
3
---
ns
Qg
Total Gate Charge
VGS=4.5V, VDS=15V,
ID=7A
---
7.2
---
nC
Qgs
Gate-Source
Charge
---
1.3
---
nC
Qgd
Gate-Drain “Miller” Charge
---
1.7
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=7A
---
1.2
V
UT4812G-S08-R



Html Pages

1 2 3 4 5


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com