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UT6898G-S08-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 UT6898G-S08-R
功能描述  Dual N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT6898G-S08-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
20
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=20V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±10V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
0.5
0.7
1
V
RDS(ON)
Drain-Source On Resistance
VGS=4.5V,ID=5A
---
8
11
mΩ
VGS=2.5V,ID=4A
---
10
13
GFS
Forward Transconductance
VDS=5V, ID=8A
---
15
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=10V, VGS=0V, f=1MHz
---
1800
---
pF
Coss
Output Capacitance
---
230
---
Crss
Reverse Transfer Capacitance
---
200
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDS=10V, RL =1.2Ω
RGEN=3Ω. VGS=10V,
---
2.5
---
ns
tr
Rise Time
---
7.2
---
ns
td(off)
Turn-Off Delay Time
---
49
---
ns
tf
Fall Time
---
10.8
---
ns
Qg
Total Gate Charge
VGS=4.5V, VDS=10V,
ID=8A
---
17.9
---
nC
Qgs
Gate-Source
Charge
---
1.5
---
nC
Qgd
Gate-Drain “Miller” Charge
---
4.7
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=4.5A
---
---
1.2
V
ls
Maximum Body-Diode Continuous Current
2
---
---
12
Notes:
UT6898G-S08-R



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