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UTD36N03L-TN3-R 数据表(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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UTD36N03L-TN3-R 数据表(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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3 / 5 page ![]() www.doingter.cn — 3 — LsD --- 23 A trr Reverse Recovery Time 4 --- Ns qrr Reverse Recovery Charge 2 --- nc Typical Characteristics: (T C=25℃ unless otherwise noted) Source-Drain Current(Body Diode) IF=20A, dI/dt=100A/s Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25 ,VDD= ℃ 30V,VG=10V, RG=25Ω Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BVDSS vs Junction Temperature Figure 4. Drain Current TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) UTD36N03L-TN3-R |
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