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UTT40P04L-S08-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 UTT40P04L-S08-R
功能描述  P-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTT40P04L-S08-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
-40
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-40V, TJ=25℃
---
---
-1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
-1.0
-1.6
-2.5
V
RDS(ON)
Drain-Source On Resistance
2
VGS=-10V,ID=-10A
---
11.5
15
mΩ
VGS=-4.5V,ID=-8A
---
16
22
GFS
Forward Transconductance
VDS=-10V, ID=-10A
---
13
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=-25V, VGS=0V, f=1MHz
---
2757
4000
pF
Coss
Output Capacitance
---
240
360
Crss
Reverse Transfer Capacitance
---
137
200
Switching Characteristics
td(on)
Turn-On Delay Time
2,3
VDS=-20V, VGS=-10V
ID=-1A,RGEN=6Ω
---
23
40
ns
tr
Rise Time
2,3
---
10
20
ns
td(off)
Turn-Off Delay Time
2,3
---
135
250
ns
tf
Fall Time
2,3
---
46
90
ns
Qg
Total Gate Charge
2,3
VDS=-32V , VGS=-4.5V ,
ID=-10A
---
22.2
40
nC
Qgs
Gate-Source
Charge
2,3
---
8.2
16
nC
Qgd
Gate-Drain “Miller” Charge
2,3
---
8.8
16
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=-1A, TJ=25℃
---
---
-1
V
UTT40P04L-S08-R



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