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STM4635 数据表(PDF) 4 Page - VBsemi Electronics Co.,Ltd

部件名 STM4635
功能描述  P-Channel 40 V (D-S) MOSFET
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

STM4635 数据表(HTML) 4 Page - VBsemi Electronics Co.,Ltd

  STM4635 Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd STM4635 Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd STM4635 Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd STM4635 Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd STM4635 Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd STM4635 Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd STM4635 Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd STM4635 Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd STM4635 Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0
0.5
1.0
1.5
TJ = 25 °C
TJ = 150 °C
V
SD - Source-to-Drain Voltage (V)
1.3
1.6
1.9
2.2
2.5
- 50
- 25
0
25
50
75
100
125
150
ID = 250 μA
T
J - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0
0.01
0.02
0.03
0.04
0.05
246
8
10
ID =10.2A
TJ = 25 °C
TJ = 125 °C
V
GS - Gate-to-Source Voltage (V)
0
20
80
Time (s)
40
60
1
1000
10
10-1
10-2
100
Safe Operating Area, Junction-to-Ambient
100
1
0.1
1
10
100
0.01
10
0.1
TA = 25 °C
Single Pulse
1s
10 s
Limited by RDS(on)*
BVDSS Limited
1ms
100 μs
10 ms
DC
100 ms
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
STM4635
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