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WNSC12650T 数据表(PDF) 1 Page - WeEn Semiconductors |
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WNSC12650T 数据表(HTML) 1 Page - WeEn Semiconductors |
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1 / 11 page ![]() WNSC12650T Silicon Carbide Diode Rev.01 - 20 July 2020 Product data sheet 1. General description Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating VRRM repetitive peak reverse voltage 650 V IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tc ≤ 129 °C; Fig. 1; Fig. 2; Fig. 3 12 A Tj junction temperature 175 °C Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF = 12 A; Tj = 25 °C; Fig. 5 - 1.7 1.8 V IF = 12 A; Tj = 150 °C; Fig. 5 - 2.15 2.2 V Dynamic characteristics Qr recovered charge IF = 12 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 7 - 16 - nC • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant RoHS halogen-Free Lead-Free |
类似零件编号 - WNSC12650T |
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类似说明 - WNSC12650T |
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