VT1045CB datasheet(2/5 Pages) VISHAY

部件名	VT1045CB

功能描述	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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VT1045CBP, VIT1045CBP

www.vishay.com

Vishay General Semiconductor

Revision: 15-Dec-16

Document Number: 89363

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 40 ms

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

IF = 2.5 A

TA = 25 °C

VF (1)

0.44

IF = 5.0 A

0.49

0.58

IF = 2.5 A

TA = 125 °C

0.34

IF = 5.0 A

0.41

0.50

Reverse current per diode

VR = 45 V

TA = 25 °C

IR (2)

500

μA

TA = 125 °C

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT1045CBP

VIT1045CBP

UNIT

Typical thermal resistance

per diode

RJC

3.5

°C/W

per device

2.5

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

VT1045CBP-M3/4W

1.87

50/tube

Tube

TO-262AA

VIT1045CBP-M3/4W

1.45

50/tube

Tube

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