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STP4NB80FP 数据表(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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STP4NB80FP 数据表(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
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2 / 9 page ![]() Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.65 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 850 VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA -0.98 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 850 V, VGS = 0 V - - μA VDS = 680 V, VGS = 0 V, TJ = 125 °C - - Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.7 Ab Ω Forward Transconductance gfs VDS = 100 V, ID = 3.7 Ab - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - - pF Output Capacitance Coss - - Reverse Transfer Capacitance Crss - - Total Gate Charge Qg VGS = 10 V ID = 3.8 A, VDS = 400 V, see fig. 6 and 13b - - 28 nC Gate-Source Charge Qgs -- 5 Gate-Drain Charge Qgd - - 1 2 Turn-On Delay Time td(on) VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD= 52 Ω see fig. 10b - - ns Rise Time tr - - Turn-Off Delay Time td(off) - - Fall Time tf - - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -5.0 - nH Internal Source Inductance LS -13 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 5.0 A Pulsed Diode Forward Currenta ISM -- 21 Body Diode Voltage VSD TJ = 25 °C, IS = 3.8 A, VGS = 0 Vb -- 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 3.8 A, dI/dt = 100 A/μsb - ns Body Diode Reverse Recovery Charge Qrr - μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G 2.40 816 68 17 15 27 66 30 1 45 4.5 320 3.3 - - V STP4NB80FP 2 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw |
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