HD1750FX datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

HD1750FX

2/8

Table 2: Absolute Maximum Ratings

Table 3: Thermal Data

Table 4: Electrical Characteristics (Tcase = 25

oC unless otherwise specified)

* Pulsed: Pulsed duration = 300

ms, duty cycle

≤ 1.5 %.

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VBE = 0)

1700

VCEO

Collector-Emitter Voltage (IB= 0)

800

VEBO

Emitter-Base Voltage (IC= 0)

Collector Current

ICM

Collector Peak Current (tp < 5ms)

Base Current

IBM

Base Peak Current (tp < 5ms)

Ptot

Total Dissipation at TC = 25

Vins

Insulation Withstand Voltage (RMS) from All Three Leads to

External Heatsink

2500

Tstg

Storage Temperature

-65 to 150

°C

Max. Operating Junction Temperature

150

°C

Rthj-case

Thermal Resistance Junction-Case

Max

1.67

oC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = 1700 V

TC = 125

0.2

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

µA

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0 )

IC = 10 mA

800

VEBO

Emitter-Base Voltage

(IC = 0 )

IE = 10 mA

VCE(sat)*

Collector-Emitter

Saturation Voltage

IC = 12 A

IB = 3 A

VBE(sat)*

Base-Emitter Saturation

Voltage

IC = 12 A

IB = 3 A

0.95

1.5

hFE

DC Current Gain

IC = 1 A

VCE = 5 V

IC = 12 A

VCE = 5 V

6.5

9.5

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 12 A

fh = 31250 Hz

IB(on) = 1.9 A

IB(off) = -8.1 A

VCE(fly) = 1320 V

VBE(off) = -2.7 V

LBB(off) = 0.8 µH

3.1

350

3.8

500

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 6.5 A

fh = 100 kHz

IB(on) = 1.2 A

IB(off) = -5.85 A

VCE(fly) = 1220 V

VBE(off) = -2.7 V

LBB(off) = 0.25 µH

1.7

180

250

µs

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