TC1026 datasheet(2/18 Pages) MICROCHIP

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TC1026

DS21725B-page 2

1.0

ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................6.0V

Package Power Dissipation:

8-Pin PDIP ...............................................730 mW

8-Pin SOIC ...............................................470 mW

8-Pin MSOP .............................................320 mW

Voltage on Any Pin .......... (VSS – 0.3V) to (VDD +0.3V)

Junction Temperature....................................... +150°C

Operating Temperature Range............. -40°C to +85°C

Storage Temperature Range .............. -55°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC1026 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Typical values apply at 25°C and VDD =3.0V; TA = -40° to +85°C, and VDD = 1.8V to 5.5V, unless

otherwise specified.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDD

Supply Voltage

1.8

—

5.5

Supply Current

—

µA

All outputs unloaded

Op Amp

AVOL

Large Signal Voltage Gain

—

100

—

V/mV

RL =10kΩ, VDD =5V

VICMR

CommonModeInput Range

VSS –0.2

—

VDD +0.2

VOS

Input Offset Voltage

±100

±0.3

±500

±1.5

µV

VDD =3V, VCM =1.5V, TA =25°C

TA = -40°C to 85°C

Input Bias Current

-100

100

TA =25°C, VCM =VDD to VSS

VOS (DRIFT)

Input Offset Voltage Drift

—

±4

—

µV/°C

VDD =3V, VCM =1.5V

GBWP

Gain-Bandwidth Product

—

kHz

VDD = 1.8V to 5.5V;

VO =VDD to VSS

Slew Rate

—

mV/

µsec CL = 100pF

RL =1MΩ to GND

Gain = 1

VIN =VSS to VDD

VOUT

Output Signal Swing

VSS +0.05

—

VDD –0.05

RL =10kΩ

CMRR

Common Mode Rejection Ratio

—

TA =25°C, VDD =5V

VCM =VDD to VSS

PSRR

Power Supply Rejection Ratio

—

TA =25°C, VCM =VSS

VDD =1.8V to5V

ISRC

Output Source Current

—

VIN+= VDD,VIN-= VSS

Output Shorted to VSS

VDD =1.8V, Gain =1

ISINK

Output SInk Current

—

125

—

nV/Hz

IN+ = VSS,IN- =VDD

Output Shorted to VDD

VDD =1.8V, Gain =1

Input Noise Voltage

—

µVpp

0.1Hz to 10Hz

Input Noise Voltage Density

—

125

—

nV/

√Hz 1kHz

Comparator

VIR

Input Voltage Range

VSS –0.2

—

VDD +0.2

VOS

Input Offset Voltage

-5

—

VDD =3V, TA =25°C

TA = -40°C to 85°C

Input Bias Current

––

—

±100

TA =25°C, IN+=VDD to VSS

VOH

Output High Voltage

VDD –0.3

—

RL =10kΩ to VSS

VOL

Output Low Voltage

—

0.3

RL =10kΩ to VDD

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