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IPA082N10NF2S 数据表(PDF) 4 Page - Infineon Technologies AG

部件名 IPA082N10NF2S
功能描述  StrongIRFETTM 2 Power-Transistor
PDF  10 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

IPA082N10NF2S 数据表(HTML) 4 Page - Infineon Technologies AG

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4
StrongIRFETTM2Power-Transistor
IPA082N10NF2S
Rev.2.0,2021-03-16
Final Data Sheet
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
2000
-
pF
VGS=0V,VDS=50V,f=1MHz
Output capacitance
Coss
-
320
-
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
Crss
-
15
-
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
11
-
ns
VDD=50V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Rise time
tr
-
20
-
ns
VDD=50V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
16
-
ns
VDD=50V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Fall time
tf
-
5
-
ns
VDD=50V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics1)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
9.3
-
nC
VDD=50V,ID=30A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
6.0
-
nC
VDD=50V,ID=30A,VGS=0to10V
Gate to drain charge
Qgd
-
6.0
-
nC
VDD=50V,ID=30A,VGS=0to10V
Switching charge
Qsw
-
9.3
-
nC
VDD=50V,ID=30A,VGS=0to10V
Gate charge total
2)
Qg
-
28
42
nC
VDD=50V,ID=30A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.7
-
V
VDD=50V,ID=30A,VGS=0to10V
Output charge
Qoss
-
38
-
nC
VDS=50V,VGS=0V
Table7Reversediode
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Diode continuous forward current
IS
-
-
26
A
TC=25°C
Diode pulse current
IS,pulse
-
-
184
A
TC=25°C
Diode forward voltage
VSD
-
0.83
1.2
V
VGS=0V,IF=15A,Tj=25°C
Reverse recovery time
trr
-
49
-
ns
VR=50V,IF=15A,diF/dt=100A/µs
Reverse recovery charge
Qrr
-
67
-
nC
VR=50V,IF=15A,diF/dt=100A/µs
1) See
″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test.



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