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ISCN279N 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 ISCN279N
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCN279N 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCN279N Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCN279N Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
ISCN279N
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO = 700V (Min)
·
High Power Dissipation-
: PD= 125W@TC= 25℃
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
6
A
ICM
Collector Current-Peak
16
A
PC
Collector Power Dissipation
@ TC=25℃
125
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃
/W


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