STO65N60DM6 datasheet(2/15 Pages) STMICROELECTRONICS

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID (1)

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM (2)

Drain current (pulsed)

140

PTOT

Total power dissipation at TC = 25 °C

320

dv/dt (3)

Peak diode recovery voltage slope

100

V/ns

di/dt (3)

Peak diode recovery current slope

1000

A/μs

dv/dt (4)

MOSFET dv/dt ruggedness

100

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Referred to TO-247 package.

2. Pulse width is limited by safe operating area.

3. ISD ≤ 46 A, VDS(peak) < V(BR)DSS, VDD = 400 V

4. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

0.39

°C/W

RthJB

Thermal resistance, junction-to-board (1)

Thermal resistance, junction-to-board (2)

1. When mounted on 1 inch² FR-4 pcb, standard footprint 2 Oz copper board.

2. When mounted on 40x40mm FR-4 pcb, 6 cm² 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

900

STO65N60DM6

Electrical ratings

DS13572 - Rev 1

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