TSB711ILT datasheet(20/36 Pages) STMICROELECTRONICS

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Where:

ΔVio is the long term drift parameter in µV.month-1/2

top is the operating time seen by the device, in months

Top is the operating temperature

VCC is the power supply during operating time

VCC nom is the nominal VCC at which the ΔVio is computed (36 V for the TSB712A).

Ea is the activation energy of the technology (here 0.7 eV).

5.6

EMI rejection

The electromagnetic interference (EMI) rejection ratio, or EMIRR, describes the EMI immunity of operational

amplifiers. An adverse effect that is common to many op-amps is a change in the offset voltage as a result of RF

signal rectification. EMIRR is defined as follows:

EMIRR=20.log VinppΔVio

(9)

The TSB711, TSB711A, TSB712, TSB712A have been specially designed to minimize susceptibility to EMIRR

and shows a low sensitivity. As visible on figure below, EMI rejection ratio has been measured on both inputs and

outputs, from 400 MHz to 2.4 GHz.

Figure 44. EMIRR on In+, In- and out pins

EMIRR performance might be improved by adding small capacitances (in the pF range) on the inputs, power

supply and output pins. These capacitances help in minimizing the impedance of these nodes at high frequencies.

TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A

EMI rejection

DS12487 - Rev 6

page 20/36

TSB711ILT 数据表(PDF) 20 Page - STMicroelectronics