2SC5012 datasheet(1/3 Pages) ISC

部件名	2SC5012

功能描述	isc Silicon NPN Low Noise Bipolar Transistor

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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isc Silicon NPN Low Noise Bipolar Transistor

2SC5012

DESCRIPTION

·

Low Noise Figure

NF = 1.7 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1GHz

·

High Gain

︱

S21︱2 =14.5dB TYP. @VCE= 8 V,IC = 30 mA,f = 1GHz

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in low noise ,high-gain amplifiers and

linear broadband amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

10

V

VEBO

Emitter-Base Voltage

1.5

V

IC

Collector Current-Continuous

65

mA

PC

Collector Power Dissipation

@TC=25℃

150

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

类似零件编号 - 2SC5012

制造商	部件名	数据表	功能描述
NEC	2SC5012	50Kb / 7P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
Renesas Technology Corp	2SC5012	189Kb / 9P	NPN SILICON RF TRANSISTOR 2004
NEC	2SC5012-T1	50Kb / 7P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
Renesas Technology Corp	2SC5012-T1	189Kb / 9P	NPN SILICON RF TRANSISTOR 2004
NEC	2SC5012-T2	50Kb / 7P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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