Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

40

52

S

C

iss

4800

pF

C

oss

V

1020

pF

C

rss

270

pF

t

d(on)

28

ns

t

r

V

30

ns

t

d(off)

R

75

ns

t

f

30

ns

Q

g(on)

145

nC

Q

gs

V

30

nC

Q

gd

80

nC

R

thJC

0.25 K/W

R

thCK

(TO-3P, TO-247)

0.21

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

typ.

Max.

I

S

V

96

A

I

SM

Repetitive

240

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

160

ns

-di/dt = 100 A/

µs

Q

RM

V

3.0

µC

IXTH 96N20P IXTQ 96N20P

IXTT 96N20P

TO-268 Outline

TO-3P (IXTQ) Outline

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6771478B2

TO-247 AD Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC