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2SC6021 数据表(PDF) 2 Page - Sanyo Semicon Device

部件名 2SC6021
功能描述  NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
PDF  4 Pages
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
标志 SANYO - Sanyo Semicon Device

2SC6021 数据表(HTML) 2 Page - Sanyo Semicon Device

  2SC6021 Datasheet HTML 1Page - Sanyo Semicon Device 2SC6021 Datasheet HTML 2Page - Sanyo Semicon Device 2SC6021 Datasheet HTML 3Page - Sanyo Semicon Device 2SC6021 Datasheet HTML 4Page - Sanyo Semicon Device  
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2SC6021
No.8343-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
50
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=3A, IB=60mA
95
145
mV
IC=4.5A, IB=90mA
135
205
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=3A, IB=60mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
180
ns
Fall Time
tf
See specified Test Circuit.
25
ns
Package Dimensions
Package Dimensions
unit : mm
unit : mm
7518-003
7003-003
Switching Time Test Circuit
VR
RB
VCC=5V
IC=20IB1= --20IB2=3A
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
2.3
2.3
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
10
5
7
6
8
9
4
2
3
1
0
0.2
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IC -- VCE
IT09458
10mA
50mA
20mA
40mA
60mA
IB=0mA
5mA
30mA
10
5
6
7
8
9
4
2
3
1
0
VCE=2V
0
0.2
0.4
0.6
0.8
1.1
1.0
0.1
0.3
0.5
0.7
0.9
IC -- VBE
IT09459
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V



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