TM4946GS datasheet(2/9 Pages) VBSEMI

2 / 9 page

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

1.5

2.0

2.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 60 V

μA

VGS = 0 V

VDS = 60 V, TJ = 125 °C

VGS = 0 V

VDS = 60 V, TJ = 175 °C

150

On-State Drain Current a

ID(on)

VGS = 10 V

VDS

≥ 5 V

Drain-Source On-State Resistance a

RDS(on)

VGS = 10 V

ID = 4.5 A-

0.028

0.040

VGS = 10 V

ID = 4.5 A, TJ = 125 °C

0.066

VGS = 10 V

ID = 4.5 A, TJ = 175 °C

0.081

VGS = 4.5 V

ID = 4 A-

0.030

0.055

Forward Transconductance f

gfs

VDS = 15 V, ID = 4.5 A

Dynamic b

Input Capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

600

750

Output Capacitance

Coss

110

140

Reverse Transfer Capacitance

Crss

-50

Total Gate Charge c

VGS = 10 V

VDS = 30 V, ID = 5.3 A

-11.7

Gate-Source Charge c

Qgs

-1.8

2.7

Gate-Drain Charge c

Qgd

-2.8

4.2

Gate Resistance

f = 1 MHz

1.3

Turn-On Delay Time c

td(on)

VDD = 30 V, RL = 6.8

≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω

-7

Rise Time c

-3.3

Turn-Off Delay Time c

td(off)

22.4

33.5

Fall Time c

-2.1

3.2

Source-Drain Diode Ratings and Characteristics b

Pulsed Current a

ISM

Forward Voltage

VSD

IF = 2 A, VGS = 0 V

0.75

1.1

TM4946GS

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