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RT2N46 数据表(PDF) 2 Page - Rectron Semiconductor |
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RT2N46 数据表(HTML) 2 Page - Rectron Semiconductor |
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2 / 5 page ![]() Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO Ic =-1mA -30 V Collector-base breakdown voltage BVCBO Ic=-100uA -30 V Emitter-base breakdown voltage BVEBO IE=-100uA -6 V Collector cutoff current ICBO VCB=-30V -100 nA Emitter cutoff current IEBO VEB=4V -100 nA Collector-emitter saturation voltage Vce(sat) IC=-1A, lB=-15mA -200 mV IC=-2A, lB=-200mA -350 mV Base-emitter saturation voltage Vbe(sat) IC=-2A, lB=-200mA -1 -1.5 V DC current gain HFE lC=-1A , VCE=-0.5V 170 210 400 lC=-1A , VCE=-2V 190 240 350 RATING AND CHARACTERISTICS CURVES (RT2N46) |
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