TSH343I datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

TSH343

Electrical Characteristics

Rev. 2

3/14

Electrical Characteristics

Table 3.

VCC = +5V Single Supply, Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

DC Performance

VDC

Input DC shift

RL = 150Ω, Tamb

0.4

0.6

0.8

-40°C < Tamb < +85°C

0.53

Iib

Input Bias Current

Tamb , input to GND

18.2

µA

-40°C < Tamb < +85°C

20.7

Rin

Input Resistance

Tamb

Ω

Cin

Input Capacitance

Tamb

1pF

ICC

Supply Current per Buffer

no Load, input to GND

14.4

-40°C < Tamb < +85°C

14.9

PSRR

Power Supply Rejection Ratio

20 log (

∆Vout/∆VCC)

(see

Figure 25 and Figure 26)

input to GND, F = 1MHz

CLF=470nF

CHF=100uF

DC Voltage Gain

RL = 150Ω, Vin = 1V

1.92

1.99

2.05

V/V

Variation of the DC Voltage Gain

between inputs of 0.3V and 1V

Input step from 0.3V to 1V

0.26

0.8

MG1

Gain Matching between 3 channels

Input = 1V

0.5

MG0.3

Gain Matching between 3 channels

Input = 0.3V

0.5

Dynamic Performance and Output Characteristics

-3dB Bandwidth

Small Signal Vout = 20mVp

RL = 150Ω

160

280

MHz

Gain Flatness @ 0.1dB

Small Signal Vout = 20mVp

RL = 150Ω

FPBW

Full Power Bandwidth

Vout =2Vp-p, VICM =0.5V,

RL = 150Ω

130

200

MHz

Delay between each channel

(see

Figure 30)

0 to 30MHz

0.5

Slew Rate (1)

Input step from 0V to 1V,

RL = 150Ω

500

780

µs

VOH

High Level Output Voltage

Vin DC = +1.5V, RL =150Ω

3.7

3.9

VOL

Low Level Output Voltage

RL = 150Ω

IOUT

Output Current

Vout =2V, Tamb

-40°C < Tamb <+85°C

Output Short Circuit Current (Isource)

100

TSH343I 数据表(PDF) 3 Page - STMicroelectronics

TSH343I 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

数据表下载

链接网址

TSH343I 数据表(PDF) 3 Page - STMicroelectronics

TSH343I 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

数据表 下载

链接网址

数据表下载