Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CDA1585BC

(9AW)

TO-92

BCE

Marking : CDA

1585

BC

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

BVCBO

20

V

Collector Emitter Voltage

BVCEO

20

V

Emitter Base Voltage

BVEBO

6.0

V

Collector Current

IC

2.0

A

Collector Current Peak

ICP*

5.0

A

Collector Power Dissipation

PC

0.4

W

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

*Single Pulse Pw=10ms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Base Voltage

VCBO

IC=50uA, IE=0

20

-

V

Collector Emitter Voltage

VCEO

IC=1mA, IB=0

20

-

V

Emitter Base Voltage

VEBO

IE=50uA, IC=0

6.0

-

V

Collector Cut off Current

ICBO

VCB=20V, IE=0

-

-

0.1

uA

ICEO

VCE=20V, IB=0

1.0

uA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

-

-

0.1

uA

DC Current Gain

hFE

VCE=2V, IC=0.1A

220

-

500

VCE=2V, IC=2A

120

-

-

Collector Emitter Saturation Voltage

VCE(Sat)

IC=2A, IB=0.1A

-

-

1.0

V

Dynamic Characteristics

Transition Frequency

ft

VCE=2V,IC=0.5A,

-

150

-

MHz

f=100MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0

-

35

-

pF

f=1MHz

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

Data Sheet

Page 1 of 3