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CSC2233 数据表(PDF) 2 Page - Continental Device India Limited |
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CSC2233 数据表(HTML) 2 Page - Continental Device India Limited |
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2 / 3 page ![]() Continental Device India Limited Data Sheet Page 2 of 3 Base current IB max. 1.0 A Total power dissipation up to TA = 25°C Ptot max. 1.5 W Total power dissipation up to TC = 25°C Ptot max. 40 W Junction temperature Tj max. 150 ºC Storage temperature Tstg –65 to +150 ºC CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 170 V ICBO max. 10 µA Emitter cut-off current IC = 0; VEB = 5 V IEBO max. 10 µA Breakdown voltages IC = 20 mA; IB = 0 VCEO min. 60 V IC = 1 mA; IE = 0 VCBO min. 200 V IE = 1 mA; IC = 0 VEBO min. 5.0 V Saturation voltages IC = 4 A; IB = 0.4 A VCEsat max. 1.0 V VBEsat max. 1.5 V D.C. current gain IC = 1 A; VCE = 5 V hFE min. 30 max. 150 IC = 4 A; VCE = 5 V hFE min. 20 Transition frequency IC = 0.5 A; VCE = 5 V fT typ. 8 MHz CSC2233 |
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