PPC5601PEF0MLL4R datasheet(64/95 Pages) NXP

64 / 95 page

MPC5602P Microcontroller Data Sheet, Rev. 6

Freescale Semiconductor

3.15.2

Flash memory power supply DC characteristics

Table 32 shows the power supply DC characteristics on external supply.

Table 30. Flash memory module life

Symbol C

Parameter

Conditions

Value

Unit

Min

Typ

P/E

C Number of program/erase cycles per

block for 16 KB blocks over the operating

temperature range (TJ)

—

100,000

—

cycles

P/E

C Number of program/erase cycles per

block for 32 KB blocks over the operating

temperature range (TJ)

—

10,000 100,000 cycles

P/E

C Number of program/erase cycles per

block for 128 KB blocks over the operating

temperature range (TJ)

—

1,000

100,000 cycles

Retention C Minimum data retention at 85 °C average

ambient temperature1

1 Ambient temperature averaged over duration of application, not to exceed recommended product operating

temperature range.

Blocks with 0–1,000 P/E cycles

—

years

Blocks with 10,000 P/E cycles

—

years

Blocks with 100,000 P/E cycles

—

years

Table 31. Flash memory read access timing

Symbol C

Parameter

Conditions1

1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified

Max value

Unit

fmax

C Maximum working frequency for code flash memory at given

number of wait states in worst conditions

2 wait states

MHz

0 wait states

fmax

C Maximum working frequency for data flash memory at given

number of wait states in worst conditions

8 wait states

MHz

Table 32. Flash memory power supply DC electrical characteristics

Symbol

Parameter

Conditions1

1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified.

Value

Unit

Min

Typ

Max

IFLPW CC D Sum of the current consumption on VDD_HV_IOx

and VDD_LV_CORx during low-power mode

Code flash memory

—

900

µA

IFPWD CC D Sum of the current consumption on VDD_HV_IOx

and VDD_LV_CORx during power-down mode

Code flash memory

—

150

µA

Data flash memory

—

150

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