ST22FJ1M datasheet(2/8 Pages) STMICROELECTRONICS

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ST22FJ1M

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MEMORY

I HIGHLY RELIABLE CMOS

FLASHTECHNOLOGY

– 10 years data retention, 100,000 Erase/Write

cycles endurance

– 64 Kbytes sector Erase in 1.5 s typical

– 32-bit word program in 100 µs for FLASH

Div 2 jittsi update and 200 µs for Page-Flash

typical in User mode

I HIGHLY RELIABLE CMOS PAGE-FLASH

TECHNOLOGY

– 10 years data retention, 100,000 Erase/Write

cycles endurance

– 32-bit word Erase in 2 ms typical

– 2K byte sector erase in 50 ms typical

– 32-bit word program in 30 µs typical in User

mode, 10 µs in Issuer mode

I FAST AND SECURE FLASH LOADER

I HIGH PERFORMANCE MEMORY

– Dual memory buses for data and instruction

– Byte, Short (2) and Word (4) load and store

– Address auto-increment

OTHER FEATURES

I HARDWARE ASYNCHRONOUS SERIAL

INTERFACE (ASI)

– 1M baud rate capability

– 2 serial I/O ports compatible ISO 7816-3 T=0

and T=1

I 2 USER CONFIGURABLE 12-BIT AND 16-BIT

TIMERS WITH INTERRUPT

I CENTRAL INTERRUPT CONTROLLER WITH

UP TO 16 INPUT LINES

I UP TO 8 MHZ BIG JITTER DIV 4

I EXTERNAL CLOCK FROM 1 MHz TO 10 MHz

I 3 V TO 5.5 V SUPPLY VOLTAGE

I TEMPERATURE RANGE -25° C to +85° C

I POWER SAVING STANDBY MODE

I ESD PROTECTION GREATER THAN 4000 V

I UNIQUE IDENTIFICATION PER DIE

ST22FJ1M 数据表(PDF) 2 Page - STMicroelectronics

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