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ISC0702NLS 数据表(PDF) 4 Page - Infineon Technologies AG |
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ISC0702NLS 数据表(HTML) 4 Page - Infineon Technologies AG |
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4 / 11 page ![]() 4 OptiMOSTM5Power-Transistor,60V ISC0702NLS Rev.2.0,2021-03-08 Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.1 1.7 2.3 V VDS=VGS,ID=38µA Zero gate voltage drain current IDSS - - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - 2.3 3.0 2.8 3.5 m Ω VGS=10V,ID=50A VGS=4.5V,ID=25A Gate resistance 1) RG - 1.3 - Ω - Transconductance gfs - 130 - S |VDS| ≥2|ID|RDS(on)max,ID=50A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance 1) Ciss - 2700 3500 pF VGS=0V,VDS=30V,f=1MHz Output capacitance 1) Coss - 580 750 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance 1) Crss - 26 35 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 6.5 - ns VDD=30V,VGS=4.5V,ID=50A, RG,ext=1.6 Ω Rise time tr - 4.6 - ns VDD=30V,VGS=4.5V,ID=50A, RG,ext=1.6 Ω Turn-off delay time td(off) - 7.5 - ns VDD=30V,VGS=4.5V,ID=50A, RG,ext=1.6 Ω Fall time tf - 6.5 - ns VDD=30V,VGS=4.5V,ID=50A, RG,ext=1.6 Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 7.7 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate charge at threshold Qg(th) - 4.4 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate to drain charge Qgd - 6.9 - nC VDD=30V,ID=50A,VGS=0to4.5V Switching charge Qsw - 10 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate charge total 1) Qg - 21 28 nC VDD=30V,ID=50A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.8 - V VDD=30V,ID=50A,VGS=0to4.5V Gate charge total 1) Qg - 42 56 nC VDD=30V,ID=50A,VGS=0to10V Output charge Qoss - 35 - nC VDS=30V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition |
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