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ISC0703NLS 数据表(PDF) 4 Page - Infineon Technologies AG

部件名 ISC0703NLS
功能描述  OptiMOSTM5 Power-Transistor, 60 V
PDF  11 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

ISC0703NLS 数据表(HTML) 4 Page - Infineon Technologies AG

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4
OptiMOSTM5Power-Transistor,60V
ISC0703NLS
Rev.2.0,2021-03-15
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
60
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
1.1
1.6
2.3
V
VDS=VGS,ID=15µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
5.8
7.6
6.9
8.9
m
Ω
VGS=10V,ID=32A
VGS=4.5V,ID=16A
Gate resistance
1)
RG
-
1.2
-
Ω
-
Transconductance
gfs
-
65
-
S
|VDS|
≥2|ID|RDS(on)max,ID=32A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
1)
Ciss
-
1100
1400
pF
VGS=0V,VDS=30V,f=1MHz
Output capacitance
1)
Coss
-
250
320
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
1)
Crss
-
14
24
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
3.0
-
ns
VDD=30V,VGS=4.5V,ID=32A,
RG,ext=3
Ω
Rise time
tr
-
2.0
-
ns
VDD=30V,VGS=4.5V,ID=32A,
RG,ext=3
Ω
Turn-off delay time
td(off)
-
9.4
-
ns
VDD=30V,VGS=4.5V,ID=32A,
RG,ext=3
Ω
Fall time
tf
-
2.8
-
ns
VDD=30V,VGS=4.5V,ID=32A,
RG,ext=3
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
3.3
-
nC
VDD=30V,ID=32A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
1.7
-
nC
VDD=30V,ID=32A,VGS=0to4.5V
Gate to drain charge
Qgd
-
3.1
-
nC
VDD=30V,ID=32A,VGS=0to4.5V
Switching charge
Qsw
-
4.6
-
nC
VDD=30V,ID=32A,VGS=0to4.5V
Gate charge total
1)
Qg
-
8.7
11
nC
VDD=30V,ID=32A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
3.0
-
V
VDD=30V,ID=32A,VGS=0to4.5V
Gate charge total
1)
Qg
-
17
23
nC
VDD=30V,ID=32A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
15
-
nC
VDS=0.1V,VGS=0to10V
Output charge
Qoss
-
15
-
nC
VDS=30V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



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