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WSG02P06 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件名 WSG02P06
功能描述  High Frequency Point-of-Load Synchronous Buck Converter.
PDF  5 Pages
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制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSG02P06 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSG02P06 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSG02P06 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSG02P06 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSG02P06 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSG02P06 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.03
---
V/℃
VGS=-10V , ID=-2A
---
175
215
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V , ID=-2A
---
mΩ
VGS(th)
Gate Threshold Voltage
-1.2
-3.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
---
4.56
---
mV/℃
VDS=-60V , VGS=0V , TJ=25℃
---
---
-1
IDSS
Drain-Source Leakage Current
VDS=-60V , VGS=0V , TJ=55℃
---
---
-5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-15V , ID=-2A
---
5
---
S
Qg
Total Gate Charge
---
6.3
---
Qgs
Gate-Source Charge
---
2.3
---
Qgd
Gate-Drain Charge
VDS=-48V , VGS=-4.5V , ID=-1A
---
1.8
---
nC
Td(on)
Turn-On Delay Time
---
20
---
Tr
Rise Time
---
. 3
---
Td(off)
Turn-Off Delay Time
---
5.2
---
Tf
Fall Time
VDD=-30V , VGS=-10V ,
RGEN=3.3Ω,RL=30Ω.
---
3.8
---
ns
Ciss
Input Capacitance
---
364
---
Coss
Output Capacitance
---
41
---
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
12
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
---
---
-2
A
VG=VD=0V , Force Current
VSD
Diode Forward Voltage
VGS=0V , IS=-1.2A , TJ=25℃
---
---
-1.2
V
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WSG02P06
P-Ch MOSFET
Page 2
www.winsok.tw
Rev 1: Apr.2019
-1.9
260
205
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any
given application depends on the user's specific board design.
B: The power dissipation PD is based on TJ(MAX)=150℃,using ≤10s junction-to-ambient thermal resistance.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150℃. Ratings are based on low frequency and duty cycles to keep initialT J=25℃.
D: The RθJA is the sum of the thermal impedence from junction to lead RθJA and lead to ambient.
E: The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F:These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with2oz. Copper,
assuming a maximum junction temperature of TJ(MAX)=150℃. The SOA curve provides a single pulse rating.



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