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WSF55P06 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件名 WSF55P06
功能描述  High Frequency Point-of-Load Synchronous
PDF  5 Pages
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制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF55P06 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF55P06 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF55P06 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF55P06 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF55P06 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF55P06 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Condition
Min
Typ
Max
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V ID=-250μA
-60
---
---
V
IDSS
Zero Gate Voltage Drain Current
VDS=-60V,VGS=0V
---
---
-1
μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
---
---
±100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=-250μA
-1
-1.8
-3.0
V
RDS(ON)
Drain-Source On-State Resistance
VGS=-10V, ID=-20A
---
23
28
mΩ
gFS
Forward Transconductance
VDS=-5V,ID=-20A
---
25
---
S
Clss
Input Capacitance
---
3017
---
PF
Coss
Output Capacitance
---
180
---
PF
Crss
Reverse Transfer Capacitance
---
126
---
PF
td(on)
Turn-on Delay Time
---
12
---
nS
tr
Turn-on Rise Time
---
15
---
nS
td(off)
Turn-Off Delay Time
---
38
---
nS
tf
Turn-Off Fall Time
---
15
---
nS
Qg
Total Gate Charge
---
49.8
---
nC
Qgs
Gate-Source Charge
---
10.6
---
nC
Qgd
Gate-Drain Charge
---
13.6
---
nC
VSD
Diode Forward Voltage (Note 3)
VGS=0V,IS=-20A
---
---
-1.2
V
IS
Diode Forward Current (Note 2)
---
---
-50
A
trr
Reverse Recovery Time
---
47
---
nS
Qrr
Reverse Recovery Charge
---
53
---
nC
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition: Tj=25℃,VDD=-20V,VG=-10V,L=0.5mH,Rg=25Ω
Switching Characteristics (Note 4)
Electrical Characteristics (TC=25℃unless otherwise noted)
TJ = 25°C, IF =- 20A
di/dt = -100A/μs(Note3)
VDS=-30,ID=-20A, VGS=-
10V
VDD=-30V, RL=1.5Ω，
VGS=-10V,RG=3Ω
VDS=-30V,VGS=0V,
F=1.0MHz
Drain-Source Diode Characteristics
Dynamic Characteristics (Note4)
On Characteristics (Note 3)
Off Characteristics
WSF55P06
P-Ch MOSFET
Page 2
www.winsok.tw
Rev1.0 May.2021



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