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WSD3068DN 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件名 WSD3068DN
功能描述  DC/DC Converters in Computing, Servers, and POL
PDF  6 Pages
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制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSD3068DN 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSD3068DN Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD3068DN Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD3068DN Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD3068DN Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD3068DN Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD3068DN Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.028
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
20A
---
4
.8
6.5
m
Ω
VGS=4.5V , ID=
20A
---
7.6
10
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.
0
---
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-6.
06
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=24V , VGS=0V , TJ=55℃
---
---
30
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=
20A
---
8.4
nC
Qgs
Gate-Source Charge
---
2.2
Qgd
Gate-Drain Charge
---
3.5
Td(on)
Turn-On Delay Time
VDD=15V , VGen=10V ,
RG=
6Ω, ID=1A, RL=15Ω.
---
3.5
ns
Tr
Rise Time
---
5.5
Td(off)
Turn-Off Delay Time
---
13.5
Tf
Fall Time
---
4.6
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
690
pF
Coss
Output Capacitance
---
310
Crss
Reverse Transfer Capacitance
---
54
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
43
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
Note :
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WSD3068DN
Page 2
www.winsok.tw
Rev1.Apr.2019
N-Ch MOSFET
---
---
---
---
---
---
---
---
---
---
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
The value in any given application depends on the user's specific board design.
B: Pulse width limited by max, junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating, package limited 50A.
D: Pulse Test：Pulse Width≤ 300us，Duty Cyde≤ 2%.



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