STB9NK90Z datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

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Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

900

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V, VDS = 0

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 3.6A

1.1

1.3

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID = 3.6 A

5.75

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

2115

190

Coss eq

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

inceases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0V to 720V

115

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=720V, ID = 8A

VGS =10V

(see Figure 19)

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