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M69KB096AA 数据表(PDF) 23 Page - STMicroelectronics

部件名 M69KB096AA
功能描述  64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM
PDF  48 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M69KB096AA 数据表(HTML) 23 Page - STMicroelectronics

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M69KB096AA
Table 12. Capacitance
Note: 1. These parameters are not fully tested.
Table 13. DC Characteristics
Note: 1. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current required to
drive the output capacitance expected in the actual system.
2. ISB(Max) values are measured with RCR2 to RCR0 bits set to ‘000’ (full array refresh) and RCR6 to RCR5 bits set to ‘11’ (temper-
ature compensated refresh threshold at +85°C). In order to achieve low standby current, all inputs must be driven either to VCCQ
or VSS. ISB may be slightly higher for up to 500 ms after power-up or when entering Standby mode.
3. The Operating Temperature is +25°C.
Symbol
Parameter
Test
Condition
Min
Max
Unit
CIN1
Address Input Capacitance
VIN = 0V
6pF
CIO
Data Input/Output Capacitance
VIO = 0V
6pF
Symbol
Parameter
Test Condition
Min.
Typ
Max.
Unit
ICC1
(1)
Operating Current:
Asynchronous Random
Read/Write
VIN =VIH or VIL,
E = VIL,
IOUT = 0mA
70ns
25
mA
85ns
20
mA
ICC1P
(1)
Operating Current:
Asynchronous Page
Read
70ns
15
mA
85ns
12
mA
ICC2
(1)
Operating Current:
Initial Access,
Burst Read/Write
80MHz
35
mA
66MHz
30
mA
ICC3R
(1)
Operating Current:
Continuous Burst Read
80MHz
18
mA
66MHz
15
mA
ICC3W
(1)
Operating Current:
Continuous Burst Write
80MHz
35
mA
66MHz
30
mA
ISB
(2)
VCC Standby Current
VIN = VCCQ or 0V,
E = VIH
120
µA
ILI
Input Leakage Current
0V
≤VIN ≤VCC
1µA
ILO
Output Leakage Current
G = VIH or E = VIH
1µA
IZZ
(3)
Deep-Power Down
Current
VIN = VIH or VIL
10
µA
VIH
Input High Voltage
1.4
VCCQ + 0.2
V
VIL
Input Low Voltage
0.2
0.4
V
VOH
Output High Voltage
IOH = 0.2mA
0.8VCCQ
V
VOL
Output Low Voltage
IOL = 0.2mA
0.2VCCQ
V



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