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M69KB096AA 数据表(PDF) 23 Page - STMicroelectronics |
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M69KB096AA 数据表(HTML) 23 Page - STMicroelectronics |
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23 / 48 page ![]() 23/48 M69KB096AA Table 12. Capacitance Note: 1. These parameters are not fully tested. Table 13. DC Characteristics Note: 1. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current required to drive the output capacitance expected in the actual system. 2. ISB(Max) values are measured with RCR2 to RCR0 bits set to ‘000’ (full array refresh) and RCR6 to RCR5 bits set to ‘11’ (temper- ature compensated refresh threshold at +85°C). In order to achieve low standby current, all inputs must be driven either to VCCQ or VSS. ISB may be slightly higher for up to 500 ms after power-up or when entering Standby mode. 3. The Operating Temperature is +25°C. Symbol Parameter Test Condition Min Max Unit CIN1 Address Input Capacitance VIN = 0V 6pF CIO Data Input/Output Capacitance VIO = 0V 6pF Symbol Parameter Test Condition Min. Typ Max. Unit ICC1 (1) Operating Current: Asynchronous Random Read/Write VIN =VIH or VIL, E = VIL, IOUT = 0mA 70ns 25 mA 85ns 20 mA ICC1P (1) Operating Current: Asynchronous Page Read 70ns 15 mA 85ns 12 mA ICC2 (1) Operating Current: Initial Access, Burst Read/Write 80MHz 35 mA 66MHz 30 mA ICC3R (1) Operating Current: Continuous Burst Read 80MHz 18 mA 66MHz 15 mA ICC3W (1) Operating Current: Continuous Burst Write 80MHz 35 mA 66MHz 30 mA ISB (2) VCC Standby Current VIN = VCCQ or 0V, E = VIH 120 µA ILI Input Leakage Current 0V ≤VIN ≤VCC 1µA ILO Output Leakage Current G = VIH or E = VIH 1µA IZZ (3) Deep-Power Down Current VIN = VIH or VIL 10 µA VIH Input High Voltage 1.4 VCCQ + 0.2 V VIL Input Low Voltage –0.2 0.4 V VOH Output High Voltage IOH = –0.2mA 0.8VCCQ V VOL Output Low Voltage IOL = 0.2mA 0.2VCCQ V |
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