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PBLS2001D 数据表(PDF) 1 Page - NXP Semiconductors |
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PBLS2001D 数据表(HTML) 1 Page - NXP Semiconductors |
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1 / 16 page ![]() 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features s Low VCEsat (BISS) and resistor-equipped transistor in one package s Low threshold voltage (< 1 V) compared to MOSFET s Low drive power required s Space-saving solution s Reduction of component count 1.3 Applications s Supply line switches s Battery charger switches s High-side switches for LEDs, drivers and backlights s Portable equipment 1.4 Quick reference data [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. PBLS2001D 20 V PNP BISS loadswitch Rev. 01 — 5 July 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor VCEO collector-emitter voltage open base - - −20 V IC collector current (DC) - - −1A RCEsat collector-emitter saturation resistance IC = −1A; IB = −100 mA [1] - 185 280 m Ω TR2; NPN resistor-equipped transistor VCEO collector-emitter voltage open base - - 50 V IO output current - - 100 mA R1 bias resistor 1 (input) 1.54 2.2 2.86 k Ω R2/R1 bias resistor ratio 0.8 1 1.2 |
类似零件编号 - PBLS2001D |
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类似说明 - PBLS2001D |
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