Discrete POWER & Signal

Technologies

N

High Conductance Low Leakage Diode

Sourced from Process 1M.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Working Inverse Voltage

456/A

457/A

458/A

459/A

25

60

125

175

V

V

V

V

Average Rectified Current

200

mA

DC Forward Current

500

mA

Recurrent Peak Forward Current

600

mA

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

1.0

4.0

A

A

Storage Temperature Range

-65 to +200

°C

Operating Junction Temperature

175

°C

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

1N / FDLL 456/A - 459/A

Total Device Dissipation

Derate above 25

°C

500

3.33

mW

mW/

°C

Thermal Resistance, Junction to Ambient

300

°C/W

1N/FDLL 456/A - 1N/FDLL 459/A

LL-34

THE PLACEMENT OF THE EXPANSION GAP

HAS NO RELATIONSHIP TO THE LOCATION

OF THE CATHODE TERMINAL

DO-35

COLOR BAND MARKING

DEVICE

1ST BAND 2ND BAND

FDLL456

BROWN

WHITE

FDLL456A

BROWN

WHITE

FDLL457

RED

BLACK

FDLL457A

RED

BLACK

FDLL458

RED

BROWN

FDLL458A

RED

BROWN

FDLL459

RED

RED

FDLL459A

RED

RED