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AT25DF011 数据表(PDF) 2 Page - Dialog Semiconductor

部件名 AT25DF011
功能描述  1-Mbit, 1.7V-3.6V Minimum SPI Serial Flash Memory
PDF  3 Pages
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制造商  DIALOG [Dialog Semiconductor]
网页  http://www.dialog-semiconductor.com/
标志 DIALOG - Dialog Semiconductor

AT25DF011 数据表(HTML) 2 Page - Dialog Semiconductor

  AT25DF011 Datasheet HTML 1Page - Dialog Semiconductor AT25DF011 Datasheet HTML 2Page - Dialog Semiconductor AT25DF011 Datasheet HTML 3Page - Dialog Semiconductor  
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DS-25DF011–052E–8/2017
High Temperature Operation (125
°C)
This data sheet addendum is to be used in conjunction with the existing AT25DF011
datasheet specifications. The Adesto AT25DF011 1Mbit Serial Flash devices will
operate @ 125°C with the following datasheet caveats. All other parameters will meet
the existing datasheet specifications.
The ordering code suffix (CAN# Code) 'HR' or 'HT' must be used to ensure correct
operation at this extended temperature range. Adesto will not modify and republish the
current datasheet to reflect the CAN# ordering code or the above caveats.The
standard AT25DF011 datasheet is available at http://www.adestotech.com.
AT25DF011
1-Mbit, 1.7V-3.6V Minimum
SPI Serial Flash Memory
DATASHEET (ADDENDUM)
1.
Electrical Specifications
1.2
DC, AC, Program and Erase Characteristics
1.1
DC and AC Operating Range
AT25DF011-xxxHR
Operating Temperature
-40
C to +125C
Endurance (Maximum)
20,000 Cycles
Symbol
Parameter
1.7V to 3.6V
2.3V to 3.6V
Units
Min
Typ
Max
Min
Typ
Max
IDPD
Deep Power-Down Current
5
40
8.5
40
µA
ISB
Standby Current
25
60
25
60
µA
ICC3
Active Current, Program Operation
12
18
12
18
mA
fRDLF
Maximum Clock Frequency for 03h
25
25
MHz
tPP
Page Program Time (256 Bytes)
1.8
7
1.8
5
ms
tPE
Page Erase Time
8
25
7
25
ms
tBLKE
Block Erase Time (4K)
50
120
50
120
ms
Block Erase Time (32K)
360
900
300
700
ms
tCHPE
Chip Erase Time
1400
3600
1200
2500
ms
tBP
Byte Program Time
12
12
µs
tCSH
Chip Select High Time
40
25
ns



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