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AT25DF021A 数据表(PDF) 2 Page - Dialog Semiconductor |
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AT25DF021A 数据表(HTML) 2 Page - Dialog Semiconductor |
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2 / 3 page ![]() DS-25DF021A–042D–11/2015 High Temperature Operation (125 °C) This data sheet addendum is to be used in conjunction with the existing AT25DF021A datasheet specifications. The Adesto AT25DF021A 2Mbit Serial Flash devices will operate @ 125°C with the following datasheet caveats. All other parameters will meet the existing datasheet specifications. The ordering code suffix (CAN# Code) 'HR' or 'HT' must be used to ensure correct operation at this extended temperature range. Adesto will not modify and republish the current datasheet to reflect the CAN# ordering code or the above caveats.The standard AT25DF021A datasheet is available at http://www.adestotech.com. AT25DF021A 2-Mbit, 1.7V-3.6V Minimum SPI Serial Flash Memory DATASHEET (ADDENDUM) 1. Electrical Specifications 1.2 DC, AC, Program and Erase Characteristics 1.1 DC and AC Operating Range AT25DF021A-xxxHR Operating Temperature -40 C to +125C Endurance (Maximum) 20,000 Cycles Symbol Parameter 1.7V to 3.6V 2.3V to 3.6V Units Min Typ Max Min Typ Max I UDPD Ultra Deep Power-Down Current .2 1 .3 1 µA I DPD Deep Power-Down Current 5 40 8 40 µA I SB Standby Current 25 65 25 65 µA I CC3 (1)(2) Active Current, Program Operation 11 14.5 12 14.5 mA I CC4 (1) (2) Active Current, Erase Operation 11 14.5 12 14.5 mA fSCK Maximum Clock Frequency for All Operation ( including 0Bh Opcode) 85 85 MHz f RDLF Maximum Clock Frequency for 03h 25 25 MHz fRDDO Maximum Clock Frequency for 3Bh Opcode 40 40 MHz t PP Page Program Time (256 Bytes) 2 6 2 5 ms t PE Page Erase Time 6 20 6 20 ms t BP Byte Program Time 12 12 µs t BLKE Block Erase Time (4K) 45 100 45 100 ms Block Erase Time (32K) 300 700 300 700 ms Block Erase Time (64K) 500 1400 500 1400 ms t CHPE Chip Erase Time 2.5 6 2.5 6 s |
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