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AT25DF021A 数据表(PDF) 2 Page - Dialog Semiconductor

部件名 AT25DF021A
功能描述  2-Mbit, 1.7V-3.6V Minimum SPI Serial Flash Memory
PDF  3 Pages
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制造商  DIALOG [Dialog Semiconductor]
网页  http://www.dialog-semiconductor.com/
标志 DIALOG - Dialog Semiconductor

AT25DF021A 数据表(HTML) 2 Page - Dialog Semiconductor

  AT25DF021A Datasheet HTML 1Page - Dialog Semiconductor AT25DF021A Datasheet HTML 2Page - Dialog Semiconductor AT25DF021A Datasheet HTML 3Page - Dialog Semiconductor  
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DS-25DF021A–042D–11/2015
High Temperature Operation (125
°C)
This data sheet addendum is to be used in conjunction with the existing AT25DF021A
datasheet specifications. The Adesto AT25DF021A 2Mbit Serial Flash devices will
operate @ 125°C with the following datasheet caveats. All other parameters will meet
the existing datasheet specifications.
The ordering code suffix (CAN# Code) 'HR' or 'HT' must be used to ensure correct
operation at this extended temperature range. Adesto will not modify and republish the
current datasheet to reflect the CAN# ordering code or the above caveats.The
standard AT25DF021A datasheet is available at http://www.adestotech.com.
AT25DF021A
2-Mbit, 1.7V-3.6V Minimum
SPI Serial Flash Memory
DATASHEET (ADDENDUM)
1.
Electrical Specifications
1.2
DC, AC, Program and Erase Characteristics
1.1
DC and AC Operating Range
AT25DF021A-xxxHR
Operating Temperature
-40
C to +125C
Endurance (Maximum)
20,000 Cycles
Symbol
Parameter
1.7V to 3.6V
2.3V to 3.6V
Units
Min
Typ
Max
Min
Typ
Max
I
UDPD
Ultra Deep Power-Down Current
.2
1
.3
1
µA
I
DPD
Deep Power-Down Current
5
40
8
40
µA
I
SB
Standby Current
25
65
25
65
µA
I
CC3
(1)(2)
Active Current, Program Operation
11
14.5
12
14.5
mA
I
CC4
(1) (2)
Active Current, Erase Operation
11
14.5
12
14.5
mA
fSCK
Maximum Clock Frequency for All
Operation ( including 0Bh Opcode)
85
85
MHz
f
RDLF
Maximum Clock Frequency for 03h
25
25
MHz
fRDDO
Maximum Clock Frequency for 3Bh
Opcode
40
40
MHz
t
PP
Page Program Time (256 Bytes)
2
6
2
5
ms
t
PE
Page Erase Time
6
20
6
20
ms
t
BP
Byte Program Time
12
12
µs
t
BLKE
Block Erase Time (4K)
45
100
45
100
ms
Block Erase Time (32K)
300
700
300
700
ms
Block Erase Time (64K)
500
1400
500
1400
ms
t
CHPE
Chip Erase Time
2.5
6
2.5
6
s



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