AT25PE20 datasheet(2/64 Pages) DIALOG

2 / 64 page

DS-25PE20–139C–8/2018

Features

Single 1.65V - 3.6V supply

Serial Peripheral Interface (SPI) compatible

Supports SPI modes 0 and 3

Supports RapidS™ operation

Continuous read capability through entire array

Up to 85MHz

Low-power read option up to 15MHz

Clock-to-output time (tV) of 6ns maximum

User configurable page size

256 bytes per page (default)

264 bytes per page (customer selectable option)

One SRAM data buffer (256/264 bytes)

Flexible programming options

Byte/Page Program (1 to 256/264 bytes) directly into main memory

Buffer Write

Buffer to Main Memory Page Program

Single Command Page Read-Modify-Write Option

Flexible erase options

Page Erase (256/264 bytes)

Block Erase (2KB)

Sector Erase (32KB)

Chip Erase (2-Mbits)

128-byte Security Register

128 bytes factory programmed with a unique identifier

Hardware and software controlled reset options

JEDEC Standard Manufacturer and Device ID Read

Low-power dissipation

300nA Ultra-Deep Power-Down current (typical)

5µA Deep Power-Down current (typical)

25µA Standby current (typical)

7mA Active Read current (typical)

Endurance: 100,000 program/erase cycles per page minimum

Data retention: 20 years

Complies with full industrial temperature range

Green (Pb/Halide-free/RoHS compliant) packaging options

8-lead SOIC (0.150ʺ wide and 0.208" wide)

8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

AT25PE20

2-Mbit DataFlash-L

Page Erase Serial Flash Memory

DATASHEET

AT25PE20 数据表(PDF) 2 Page - Dialog Semiconductor

AT25PE20 数据表(HTML) 2 Page - Dialog Semiconductor

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