AFSC5G35E38

1

RF Device Data

NXP Semiconductors

Power Amplifier Module for LTE and

5G

The AFSC5G35E38 is a fully integrated Doherty power amplifier module

designed for wireless infrastructure applications that demand high

performance in the smallest footprint. Ideal for applications in massive MIMO

systems, outdoor small cells and low power remote radio heads. The

field--proven LDMOS power amplifiers are designed for TDD and FDD LTE

systems.

3400–3600 MHz

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

3410 MHz

30.4

–30.0

43.0

3500 MHz

30.8

–28.0

42.0

3590 MHz

31.1

–29.0

41.0

1. All data measured with device soldered in NXP reference circuit.

Features

 Frequency: 3400–3700 MHz

 Advanced high performance in--package Doherty

 Fully matched (50 ohm input/output, DC blocked)

 Designed for low complexity analog or digital linearization systems

Document Number: AFSC5G35E38

Rev. 1, 09/2020

NXP Semiconductors

Technical Data

3400–3700 MHz, 30 dB, 7 W Avg.

AIRFAST POWER AMPLIFIER

MODULE

AFSC5G35E38

 2020 NXP B.V.