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MRLM101AX-R-H 数据表(PDF) 7 Page - National Semiconductor (TI) |
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MRLM101AX-R-H 数据表(HTML) 7 Page - National Semiconductor (TI) |
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7 / 15 page ![]() MRLM101A-X-RH REV 1B2 MICROCIRCUIT DATA SHEET Electrical Characteristics DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms. "Delta calculations performed on JAN S and QMLV devices at group B, subgroup 5 only". SYMBOL PARAMETER CONDITIONS NOTES PIN- NAME MIN MAX UNIT SUB- GROUPS Vio Input Offset Voltage Vcm = 0V -0.5 0.5 mV 1 Iib+ Input Bias Current Vcm = 0V, Rs = 100K Ohms -7.5 7.5 nA 1 Iib- Input Bias Current Vcm = 0V, Rs = 100K Ohms -7.5 7.5 nA 1 Note 1: Calculated parameter. Note 2: Datalog reading of K = V/mV. Note 3: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019.5 7 |
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