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ADMV8416ACPZ-R5 数据表(PDF) 5 Page - Analog Devices |
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ADMV8416ACPZ-R5 数据表(HTML) 5 Page - Analog Devices |
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5 / 16 page ![]() Data Sheet ADMV8416 Rev. A | Page 5 of 16 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Tuning VTUNE −0.5 V to +15 V ITUNE ±1 μA Supply Voltages VEE −5.6 V VDD 5.6 V VCTL −0.5 V to VDD + 0.5 V RF Input Power 2 GHz to 50 GHz 27 dBm 0.5 GHz to 2 GHz 19 dBm 0 GHz to 0.5 GHz 6 dBm Hot Switch Input Power 2 GHz to 50 GHz 24 dBm 0.5 GHz to 2 GHz 16 dBm 0 GHz to 0.5 GHz 3 dBm Temperature Operating −40°C to +85°C Storage Temperature −65°C to +150°C Junction for 1 Million Mean Times Between Failures (MTTF) 150°C Nominal Junction (TPADDLE = 85°C, input power (PIN) = 23 dBm) 150°C Electrostatic Discharge (ESD) Rating Human Body Model (HBM) 250 V Field Induced Charge Device Model (FICDM) 1250 V Moisture Sensitivity Level (MSL) Rating MSL3 Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION |
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