LM2003 datasheet(1/10 Pages) LEIDITECH

部件名	LM2003

功能描述	N and P-Channel Enhancement Mode Power MOSFET

PDF	10 Pages

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制造商	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

网页	http://www.leiditech.com

标志

1 / 10 page

Description

The LM2003 uses advanced trench technology to provide

excellent RDS(ON) and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

● N-Channel

VDS = 20V,ID =3A

RDS(ON) < 65mΩ @ VGS=4.5V

RDS(ON) < 90mΩ @ VGS=2.5V

● P-Channel

VDS = -20V,ID = -3A

RDS(ON) < 110mΩ @ VGS=-4.5V

RDS(ON) < 140mΩ @ VGS=-2.5V

●

High power and current handing capability

●

Lead free product is acquired

●

Surface mount package

Marking and pin Assignment

SOT-23-6L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE2003

LM2003

SOT-23-6L

Ø180mm

8mm

3000 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

20

-20

V

Gate-Source Voltage

VGS

±12

V

TA=25℃

3

-3

Continuous Drain Current

TA=70℃

ID

2.4

-2.4

A

Pulsed Drain Current

(Note 1)

IDM

13

-13

A

Maximum Power Dissipation

TA=25℃

PD

0.8

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note2)

RθJA

N-Ch

156

/W

℃

Thermal Resistance,Junction-to-Ambient

(Note2)

RθJA

P-Ch

156

/W

℃

N-channel

P-channel

N and P-Channel Enhancement Mode Power MOSFET

LM2003

Rev :

www.leiditech.com

01.06.2014

1/10

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