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LM6002 数据表(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM6002 数据表(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 5 page ![]() Description Dimensions SOT-23 Pin Configuration Rev : www.leiditech.com N-Channel MOSFET LM6002 D(3) S(2) G(1) The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(Ω) ID(A) 100 0.23@ VGS=10V 2 Parameter Symbol Value Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Curren TA=25℃ ID 2 A TA=70℃ 0.8 Pulsed Drain Current 1 IDM 18 A Avalanche Current IAS 18 A Avalanche Energy L=0.1mH EAS 16.5 mJ Maximum Power Dissipation TA=25℃ PD 0.75 W TA=70℃ 0.3 Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 ℃ Thermal Resistance-Junction to Ambient RθJA 166 ℃ /W Absolute maximum rating@25℃ 01.06.2014 1/5 |
类似零件编号 - LM6002 |
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类似说明 - LM6002 |
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