LM6003 datasheet(1/6 Pages) LEIDITECH

部件名	LM6003

功能描述	N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

制造商	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

网页	http://www.leiditech.com

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1 / 6 page

Description

The LM6003 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

Battery protection or in other switching application.

General Features

●

VDS =60V,ID =3A

RDS(ON) <105mΩ @ VGS=10V

RDS(ON) < 125mΩ @ VGS=4.5V

●

High power and current handing capability

●

Lead free product is acquired

●

Surface mount package

Application

●

Battery switch

●

DC/DC converter

D

G

S

Schematic Diagram

Marking and Pin Assignment

SOT-23 Top View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

6003

LM6003

SOT-23

Ø180mm

8 mm

3000 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

3

A

Drain Current-Pulsed

(Note 1)

IDM

10

A

Maximum Power Dissipation

PD

1.7

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note 2)

RθJA

73.5

/W

℃

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

60

65

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V

-

1

μA

Enhancement Mode Power MOSFET

LM6003

Rev :

www.leiditech.com

01.06.2014

1/6

Rev :

www.leiditech.com

01.06.2014

1/6

N-Channel

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