MSCSM70HM05CAG datasheet(4/16 Pages) MICROCHIP

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The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM70HM05CAG device.

Table 1-3. Dynamic Characteristics

Symbol

Characteristics

Test Conditions

Min

Typ

Max

Unit

Ciss

Input capacitance

VGS = 0 V

VDS = 700 V

f = 1 MHz

—

13.5

—

Coss

Output capacitance

—

1.5

—

Crss

Reverse transfer

capacitance

—

0.09

—

Total gate charge

VGS = –5 V/20 V

VBus = 470 V

ID = 120 A

—

645

—

Qgs

Gate–Source charge

—

174

—

Qgd

Gate–Drain charge

—

105

—

Td(on)

Turn-on delay time

VGS = –5 V/20 V

VBus = 400 V

ID = 240 A; TJ = 150 °C

RG(ON) = 9.4 Ω; RG(OFF) = 5.4 Ω

—

Rise time

—

125

—

Td(off)

Turn-off delay time

—

214

—

Fall time

—

Eon

Turn-on energy

VGS = –5 V/20 V

VBus = 400 V

ID = 240 A

RG(ON) = 9.4 Ω

RG(OFF) = 5.4 Ω

TJ = 150 °C

—

Eoff

Turn-off energy

TJ = 150 °C

—

5.3

—

RGint

Internal gate resistance

—

1.9

—

RthJC

Junction-to-case thermal resistance

—

0.155

°C/W

The following table lists the body diode ratings and characteristics per SiC MOSFET of the MSCSM70HM05CAG

device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristics

Test Conditions

Min

Typ

Max

Unit

VSD

Diode forward

voltage

VGS = 0 V; ISD = 120 A

—

3.4

—

VGS = –5 V; ISD = 120 A

—

3.8

—

trr

Reverse recovery

time

ISD = 120 A

VGS = –5 V

VR = 400 V

diF/dt = 3000 A/µs

—

Qrr

Reverse recovery

charge

—

1.5

—

µC

Irr

Reverse recovery

current

—

MSCSM70HM05CAG

Electrical Specifications

Datasheet

DS00003927A-page 4

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