1.2

SiC Schottky Diode Ratings and Characteristics (Per SiC Diode)

The following table lists the SiC Schottky diode ratings and characteristics of the MSCSM170AM058CD3AG device.

Table 1-5. SiC Schottky Diode Ratings and Characteristics (Per SiC Diode)

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Peak repetitive reverse voltage

—

—

1700

V

Reverse leakage current

—

60

1200

µA

—

900

—

Forward current

—

180

—

A

Diode forward voltage

—

1.5

1.8

V

—

2.3

—

Total capacitive charge

—

1380

—

nC

C

Total capacitance

—

1002

—

pF

—

828

—

Junction-to-case thermal resistance

—

—

0.1

°C/W

1.3

Thermal and Package Characteristics

The following table lists the package characteristics of the MSCSM170AM058CD3AG device.

Table 1-6. Thermal and Package Characteristics

Symbol

Characteristic

Min

Max

Unit

RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz 4000

—

V

Operating junction temperature range

–40

175

°C

Recommended junction temperature under switching conditions

–40

Storage case temperature

–40

125

Operating case temperature

–40

125

Torque

Mounting torque

For

terminals

M6

3

5

N.m

To heatsink

M6

3

5

Wt

Package weight

—

350

g

MSCSM170AM058CD3AG

Electrical Specifications

Datasheet

DS00003977A-page 5