2SB1260-R datasheet(1/2 Pages) LUGUANG

部件名	2SB1260-R

功能描述	Plastic-encapsulate PNP Transistors

PDF	2 Pages

Scroll/Zoom	100%

制造商	LUGUANG [Shenzhen Luguang Electronic Technology Co., Ltd]

网页	http://www.luguang.cn/web_en/index.html

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1 / 2 page

.

■

Features

●

Hight breakdown voltage and high current.

●

Low collector-emitter saturation voltage VCE(sat)

●

Good hFE linearty.

●

Complementary to 2SD1898

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-80

Collector - Emitter Voltage

VCEO

-80

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-1

Collector current -Pulse

ICP

-2

Collector Power Dissipation

0.5

2

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

PC

W

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-80

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA, IB=0

-80

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -60V , IE=0

-1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-1

Collector-emitter saturation voltage

VCE(sat) IC=-500 mA, IB=-50mA

-0.4

Base - emitter saturation voltage

VBE(sat) IC=-500 mA, IB=-50mA

-1.2

DC current gain

hFE

VCE= -3V, IC= -100 mA

120

390

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

20

pF

Transition frequency

fT

VCE= -10V, IE= 50mA,f=100MHz

100

MHz

V

uA

■

Classification of hfe

Type

2SB1260-Q

2SB1260-R

Range

120-270

180-390

Marking

BE Q*

BE R*

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

2SB1

260

Plastic-encapsulate PNP Transistors

ht

t

p

:

//

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mail:lge@lgesemi.com

Revision:20170701-P1

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