AOU401L datasheet(1/5 Pages) AOSMD

部件名	AOU401L

功能描述	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

制造商	AOSMD [Alpha & Omega Semiconductors]

网页	http://www.aosmd.com

标志

1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

RθJA

100

125

RθJC

1.9

2.5

W

Maximum Junction-to-Case

B

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

Steady-State

°C/W

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±20

Gate-Source Voltage

Drain-Source Voltage

-60

Pulsed Drain Current

C

Power Dissipation

B

TC=25°C

Continuous Drain

Current

G

Maximum

Units

Parameter

TC=25°C

TC=100°C

ID

-26

-18

-60

Junction and Storage Temperature Range

A

PD

°C

60

30

-55 to 175

TC=100°C

Avalanche Current

C

-26

Repetitive avalanche energy L=0.1mH

C

134

A

mJ

AOU401

P-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = -60V

ID = -26 A (VGS = -10V)

RDS(ON) < 40 mΩ (VGS = -10V) @ 20A

RDS(ON) < 55 mΩ (VGS = -4.5V)

General Description

The AOU401 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications. Standard

Product AOU401 is Pb-free (meets ROHS & Sony

259 specifications). AOU401L is a Green Product

ordering option. AOU401 and AOU401L are

electrically identical.

G

D

S

Top View

Drain Connected

to Tab

TO-251

G

D

S

Alpha & Omega Semiconductor, Ltd.

类似零件编号 - AOU401L

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	AOU401	354Kb / 2P	isc P-Channel MOSFET Transistor

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