AOB405 datasheet(1/5 Pages) AOSMD

部件名	AOB405

功能描述	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

制造商	AOSMD [Alpha & Omega Semiconductors]

网页	http://www.aosmd.com

标志

1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

11

16

45

54

RθJC

2.5

3

Maximum Junction-to-Case

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

W

TA=70°C

1.5

Junction and Storage Temperature Range

-55 to 175

Power Dissipation

A

TA=25°C

PDSM

2.3

A

Repetitive avalanche energy L=0.1mH

C

mJ

Power Dissipation

B

TC=25°C

PD

W

TC=100°C

Avalanche Current

C

Continuous Drain

Current

B,G

Maximum

Units

Parameter

TA=25°C

G

TA=100°C

G

Absolute Maximum Ratings TA=25°C unless otherwise noted

ID

Gate-Source Voltage

Drain-Source Voltage

-40

Pulsed Drain Current

-12

-30

°C

V

±20

25

A

-12

30

50

AOB405

P-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = -40V

ID = -12A (VGS = -10V)

RDS(ON) < 48mΩ (VGS = -10V)

RDS(ON) < 72mΩ (VGS = -4.5V)

General Description

The AOB405 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the D2PAK package, this device is well suited for

high current load applications. Standard Product

AOB405 is Pb-free (meets ROHS & Sony 259

specifications). AOB405L is a Green Product ordering

option. AOB405 and AOB405L are electrically

identical.

G

D

S

G

D

S

TO-263

D2-PAK

Top View

Drain Connected to

Tab

Alpha & Omega Semiconductor, Ltd.

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